au.\*:("NORRIS MT")
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SUBSTRATE TEMPERATURE RELATED DEGRADATION MECHANISMS IN MOLECULAR BEAM EPITAXIAL INPNORRIS MT.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 282-283; BIBL. 6 REF.Article
COMPOSITION CONTROL OF GAXIN1-XAS FILMS GROWN BY MBE ONTO INP SUBSTRATESNORRIS MT.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 10; PP. 833-835; BIBL. 7 REF.Article
SUBSTRATE TEMPERATURE LIMITS FOR EPITAXY OF INP BY MBENORRIS MT; STANLEY CR.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 8; PP. 617-620; BIBL. 14 REF.Article
COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBEFOXON CT; JOYCE BA; NORRIS MT et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 1; PP. 132-140; BIBL. 17 REF.Article